| Technologies |
Type |
Peripheral |
Features |
Remarks |
Application |
| Embedded NVM |
e-OTP |
0.5um 5V |
3P3M |
floating gate |
- Fast program.
- Competitive cell size.
- Retention >10years.
- Mixed-signal support. (PiP)
- IP of 4Kx8~64Kx16 available.
|
µ Controller
ASIC |
| e-ROM |
0.5um 5V |
1P3M |
P-code (Flat cell) or N-code (for 0.5um) |
- Competitive cell size.
- Competitive TAT, MOQ.
- 2P option in 0.45um e-ROM : HR=2k ohm or low TC option
|
| 0.5um 3.3V |
1P3M |
P-code (Flat cell) or N-code (for 0.5um) |
| 0.45um 5V |
2P3M |
P-code (Flat cell) |
| 0.35um 3V |
1P3M |
P-code (Flat cell) |
| 0.35um 3V/5V |
1P3M |
P-code (Flat cell) |
| 0.35um 3V/12V |
1P3M |
P-code (Flat cell) |
| LV e-ROM |
0.5um 1.5V |
1P3M |
P-code (Flat cell) |
- Low power.
- Competitive TAT, MOQ.
|
| 0.45um 1.5V |
2P3M |
P-code (Flat cell) |
HV CMOS
(Mixed-Mode) |
LDD |
0.5um 3.3V/10V |
1P2M |
HV LDD Device |
Competitive HV LDD device. |
Driver, PMIC |
| DDD |
0.35um 3V/12V |
1P3M |
HV DDD Device |
Competitive HV DDD device. |
Analog, Driver, PMIC |
| 0.35um 3V/5V/12V |
2P3M |
MV DDD Device |
| 0.5um 3.3V/12V |
1P2M |
HV DDD Device |
| 0.5um 3.3V/16V |
1P2M |
| 0.5um 5V/12V |
2P3M |
HV DDD Device
PiP&HR |
- Competitive HV DDD device.
- HR=2k ohm & optional
|
| 0.5um 5V/16V |
2P3M |
| 0.5um 5V/18V |
2P3M |
0.5um 5V/12V
(Triple-Well) |
2P3M |
HV DDD Device
PiP&HR |
- Triple well isolation
- Competitive HV DDD device.
- HR=2k ohm & optional
|
| LDMOS |
0.5um 5V/24V |
2P3M |
HV LDMOS Device
PiP&HR |
- Triple well isolation
- Competitive HV LDMOS device.
- HR=2k ohm & optional
- Zener, depletion NMOS
|
| 0.5um 5V/40V |
2P3M |
| 1.0um 5V/40V |
1P2M |
HV LDMOS Device |
N-buried layer for isolation. |
| HV BCD |
LDMOS |
0.5um 5V/16V/40V |
2P3M |
HD LDMOS Device |
N-buried layer for isolation.
HR=2k ohm & optional.Zener,depletion NMOS |
DCDC, PWM |
| 0.5um 5V/18V |
2P3M |
HD LDMOS/DDD Device |
| 0.5um 5V/36V(Max) |
2P3M |
HD LDMOS Device |
Logic&
Mixed-Signal |
Logic |
0.6um 5V |
1P2M |
CMOS |
Compatible logic platform. |
Logic ASIC |
| 0.5um 3.3/5V |
1P3M |
| 0.35um 3V |
1P3M |
| 0.35um 3/5V |
1P3M |
| Mixed-Signal |
0.6um 7V(Max) |
2P2M |
PiP&HR(Nsub) |
- Fully capacity support for mixed signal technologies.
- Flexible on customized requirement.
- HR=2k ohm & optional
|
Analog, Driver, PMIC, LDO |
| 0.6um 5V |
2P2M |
CMOS
PiP&HR |
| 0.5um 5V |
2P3M |
| 0.5um 1.5V |
2P3M |
| 0.35um 3/5V |
2P3M |
| Logic base & HV compatible NVM IP |
IP |
0.5um logic-base electrical fuse |
1P2M
2P2M |
Logic-base with electrical programming and erasing capability |
- Retention > 10 years.
- electrical-fuse and EEPROM options.
|
- Replace trim fuse
- EEPROM memory embedded
- MTP memory embedded
|
| 0.35um logic-base Flash/EEPROM |
1P3M
2P3M |
|
